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2N5551 NPN Amplifier Transistor

2N5551 NPN Amplifier Transistor Pinout

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Pin Configuration:

Pin Number	Pin Name	Description
1	Emitter	Current Drains out through emitter, normally connected to ground
2	Base	Controls the biasing of transistor, Used to turn ON or OFF the transistor
3	Collector	Current flows in through collector, normally connected to load

Features:

Amplifier NPN Transistor
High DC Current Gain (hFE), typically 80 when IC=10mA
Continuous Collector current (IC) is 600mA
Collector-Emitter voltage (VCE) is 160 V
Collector-Base voltage (VCB) is 180V
Emitter Base Voltage (VBE) is 6V
Transition Frequency is 100MHz
Available in To-92 Package

Note: Complete Technical Details can be found at the 2N5551 datasheet given at the end of this page.

Alternative NPN Transistors:

BC549, BC636, BC639, BC547, 2N2369, 2N3055, 2N3904, 2N3906, 2SC5200

2N5551 Equivalent Transistors:

NTE194, 2N5833, 2N5088, 2N3055, 2N5401 (PNP)

Same Family Transistors:

2N5550

Where to use 2N5551:

The 2N5551 is an NPN amplifier Transistor with an amplification factor (hfe) of 80 when the collector current is 10mA. It also has decent switching characteristics (Transition frequency is 100MHz) hence can amplify low-level signals.

Due to this feature, the transistor is commonly used for amplification of audio or other low power signals. So if you are looking for an NPN transistor for you amplifier circuit then this transistor might be the right choice.

How to use 2N5551:

As told earlier the 2N5551 NPN transistor is widely used for amplification. A very simple bare minimum circuit for a transistor to work as an amplifier is shown below. The simulation graph that shows the amplified output sine wave can also be found.

Here the input sine wave of magnitude 8mV (yellow colour) is amplified to 50mV (Pink colour) as shown in the graph. In the above circuit the resistors R3 and R4 form a potential divider which decides the Emitter -Base voltage (V_BE). The Resistor R1 is the load resistor and the resistor R2 is the emitter resistor. Changing the value of R_L will affect the amplification of the output wave.

A transistor is normally a current amplifier, meaning the current flowing though the base will be amplified in the current flowing through the collector. This amplification depends on the amplification factor (h_fe) which is 80 for 2N5551. This means that the collector current will be amplified by 80 times than that of the base current.

I_c = βI_b

Another current that we have bring into consideration is the emitter current (I_E), but due to transistor action we assume that Emitter current is almost equal to the value of Collector current, however the difference between the both can be found with the value of α. Normally the value of collector current will e given by

I_E = I_C + I_B

The output is obtained across the collector which is the Collector-Emitter voltage (V_CE). This output voltage depends on the Input voltage (Vcc, here 12V) without the voltage drop across the loads resistor (R1). Therefore the output voltage Vout can be given as

Vout = VCE = (Vcc – IcRc)

Applications:

Low power amplifiers
Current amplifiers
Small signal boosters
Audio or other signal amplifiers
Darlington pair

2D model of the component:

If you are designing a PCD or Perf board with this component then the following picture from the 2N5551 Datasheet will be useful to know its package type and dimensions.

Type Designator: 2N5401

Material of Transistor: Si

Polarity: PNP

Maximum Collector Power Dissipation (Pc): 0.31 W

Maximum Collector-Base Voltage Vcb : 160 V

Maximum Collector-Emitter Voltage Vce : 150 V

Maximum Emitter-Base Voltage Veb : 5 V

Maximum Collector Current Ic max : 0.6 A

Max. Operating Junction Temperature (Tj): 135 °C

Transition Frequency (ft): 100 MHz

Download labaik allahuma labaik unt haji. Collector Capacitance (Cc): 6 pF

Forward Current Transfer Ratio (hFE), MIN: 60

Noise Figure, dB: -

Package: TO92

2N5401 Transistor Equivalent Substitute - Cross-Reference Search

2N5401 Datasheet (PDF)

1.1. 2n5401g.pdf Size:121K _upd

2N5401 Amplifier Transistors PNP Silicon Features • These are Pb-Free Devices* http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit 2 BASE Collector - Emitter Voltage VCEO 150 Vdc Collector - Base Voltage VCBO 160 Vdc 1 Emitter - Base Voltage VEBO 5.0 Vdc EMITTER Collector Current - Continuous IC 600 mAdc Total Device Dissipation @ TA = 25°C PD 625 mW Der

1.2. 2n5401rlrag.pdf Size:121K _upd

1.3. 2n5401csm.pdf Size:11K _upd

2N5401CSM Dimensions in mm (inches). Bipolar PNP Device in a 0.51 ± 0.10 Hermetically sealed LCC1 (0.02 ± 0.004) 0.31 rad. (0.012) Ceramic Surface Mount 3 Package for High Reliability Applications 21 1.91 ± 0.10 (0.075 ± 0.004) A 0.31 rad. Bipolar PNP Device. (0.012) 3.05 ± 0.13 (0.12 ± 0.005) 1.40 (0.055) 1.02 ± 0.10 max. VCEO = 150V A = (0.04 ± 0.00

1.4. 2n5401dcsm.pdf Size:10K _upd

2N5401DCSM Dimensions in mm (inches). Dual Bipolar PNP Devices in a hermetically sealed LCC2 Ceramic Surface Mount Package for High Reliability 1.40 ± 0.15 2.29 ± 0.20 1.65 ± 0.13 (0.055 ± 0.006) (0.09 ± 0.008) (0.065 ± 0.005) Applications 2 3 1 4 Dual Bipolar PNP Devices. A 0.23 6 5 rad. (0.009) V = 150V CEO 6.22 ± 0.13 A = 1.27 ± 0.13 I = 0.6A C (0.

1.5. 2n5401hr.pdf Size:432K _upd

2N5401HR Hi-Rel PNP bipolar transistor 150 V, 0.5 A Datasheet - production data Features 3 BVCEO 150 V 1 1 IC (max) 0.5 A 2 2 3 HFE at 10 V - 150 mA > 60 TO-18 LCC-3 3 • Hermetic packages 4 • ESCC and JANS qualified 1 • Up to 100 krad(Si) low dose rate 2 UB Description Pin 4 in UB is connected to the metallic lid. The 2N5401HR is a silicon planar PNP transistor

1.6. 2n5401n.pdf Size:249K _upd

2N5401N Semiconductor Semiconductor PNP Silicon Transistor Description • General purpose amplifier • High voltage application Features • High collector breakdown voltage : VCBO = -160V, VCEO = -160V • Low collector saturation voltage : VCE(sat)=-0.5V(MAX.) • Complementary pair with 2N5551N Ordering Information Type NO. Marking Package Code 2N5401N 2N5401 T

1.7. 2n5400 2n5401.pdf Size:177K _motorola

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N5400/D Amplifier Transistors 2N5400 PNP Silicon * 2N5401 *Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 MAXIMUM RATINGS Rating Symbol 2N5400 2N5401 Unit CASE 29–04, STYLE 1 TO–92 (TO–226AA) Collector–Emitter Voltage VCEO 120 150 Vdc Collector–Base Voltage VCBO 130 160 Vdc Emitter–Base Voltage VEB

1.8. 2n5401.pdf Size:52K _philips

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 2N5401 PNP high-voltage transistor Product specification 2004 Oct 28 Supersedes data of 1999 Apr 08 Philips Semiconductors Product specification PNP high-voltage transistor 2N5401 FEATURES PINNING • Low current (max. 300 mA) PIN DESCRIPTION • High voltage (max. 150 V). 1 collector 2 base APPLICATIONS 3 emitter • General pu

1.9. 2n5401 3.pdf Size:49K _philips

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 2N5401 PNP high-voltage transistor 1999 Apr 08 Product specification Supersedes data of 1997 May 22 Philips Semiconductors Product specification PNP high-voltage transistor 2N5401 FEATURES PINNING • Low current (max. 300 mA) PIN DESCRIPTION • High voltage (max. 150 V). 1 collector 2 base APPLICATIONS 3 emitter • General p

1.10. 2n5401 mmbt5401.pdf Size:75K _fairchild_semi

2N5401 MMBT5401 C E C TO-92 B B SOT-23 E Mark: 2L PNP General Purpose Amplifier This device is designed as a general purpose amplifier and switch for applications requiring high voltages. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 150 V VCBO Collector-Base Voltage 160 V VEBO Emitter-Base Voltage 5.0 V IC Co

1.11. 2n5401.pdf Size:53K _samsung

2N5401 PNP EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR TO-92 • Collector-Emitter Voltage: VCEO= 150V • Collector Dissipation: PC (max)=625mW ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO -160 V Collector-Emitter Voltage VCEO -150 V Emitter-Base Voltage VEBO -5 V Collector Current IC -600 mA Collector Dissipation PC 625 mW Junc

1.12. 2n5400 2n5401.pdf Size:80K _central

145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824

1.13. 2n5401.pdf Size:275K _mcc

2N5401 MCC TM Micro Commercial Components ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage(1) V(BR)CEO Vdc (IC = 1.0 mAdc, IB = 0) 150 — Collector–Base Breakdown Voltage V(BR)CBO Vdc (IC = 100 mAdc, IE = 0) 160 — Emitter–Base Breakdown Voltage V(BR)EBO 5.0 — Vdc (IE = 10 mAdc, IC =

1.14. 2n5401-d.pdf Size:145K _onsemi

1.15. 2n5401.pdf Size:219K _utc

UNISONIC TECHNOLOGIES CO., LTD 2N5401 PNP SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR ? FEATURES * Collector-emitter voltage: VCEO = -150V * High current gain, ? ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2N5401L-x-AB3-R 2N5401G-x-AB3-R SOT-89 B C E Tape Reel 2N5401L-x-T92-B 2N5401G-x-T92-B TO-92 E B C Tape Box

1.16. 2n5401.pdf Size:250K _auk

2N5401 PNP Silicon Transistor Description PIN Connection • General purpose amplifier E • High voltage application Features B • High collector breakdown voltage : VCBO = -160V, VCEO = -160V • Low collector saturation voltage : C VCE(sat)=-0.5V(MAX.) TO-92 • Complementary pair with 2N5551 Ordering Information Type NO. Marking Package Code 2N5401 TO-92

1.17. 2n5401.pdf Size:337K _secos

2N5401 -0.6 A, -160 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURES G H Switching and amplification in high voltage Applications such as telephony J Low current (max. 600mA) A D Millimeter REF. Min. Max. B High voltage (max. 160V) A 4.40 4.70 B 4.30 4.7

1.18. 2n5401.pdf Size:274K _cdil

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP EPITAXIAL PLANAR SILICON HIGH VOLTAGE TRANSISTOR 2N5401 TO-92 CBE C B E High Voltage PNP Transistor For General Purpose And Telephony Applications. ABSOLUTE MAXIMUM RATINGS(Ta=25deg C unless otherwise specified) DESCRIPTION SYMBOL VALUE UNIT Collector -Emitter Voltage VCEO 150 V Collector -Ba

1.19. 2n5401.pdf Size:32K _kec

SEMICONDUCTOR 2N5401 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. B C FEATURES High Collector Breakdwon Voltage N DIM MILLIMETERS : VCBO=-160V, VCEO=-150V A 4.70 MAX E K Low Leakage Current. B 4.80 MAX G C 3.70 MAX D : ICBO=-50nA(Max.) @VCB=-120V D 0.45 E 1.00 Low Saturation Voltage F 1.27 G 0.85 : VCE(sat)=-0.5V(M

1.20. 2n5401s.pdf Size:33K _kec

SEMICONDUCTOR 2N5401S TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. E L B L DIM MILLIMETERS FEATURES _ + 2.93 0.20 A B 1.30+0.20/-0.15 High Collector Breakdwon Voltage C 1.30 MAX 2 : VCBO=-160V, VCEO=-150V 3 D 0.45+0.15/-0.05 E 2.40+0.30/-0.20 Low Leakage Current. 1 G 1.90 H 0.95 : ICBO=-50nA(Max.) @VCB=-120V J 0.1

1.21. 2n5401c.pdf Size:32K _kec

SEMICONDUCTOR 2N5401C TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. B C FEATURES High Collector Breakdwon Voltage N DIM MILLIMETERS : VCBO=-160V, VCEO=-150V A 4.70 MAX E K Low Leakage Current. B 4.80 MAX G C 3.70 MAX D : ICBO=-50nA(Max.) @VCB=-120V D 0.45 E 1.00 Low Saturation Voltage F 1.27 G 0.85 : VCE(sat)=-0.5V(

1.22. 2n5401.pdf Size:204K _lge

2N5401(PNP) TO-92 Bipolar Transistors TO-92 1. EMITTER 2. BASE 3. COLLECTOR Features Switching and amplification in high voltage Applications such as telephony Low current(max. 600mA) High voltage(max.160v) MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units Dimensions in inches and (millimeters) VCBO Collector-Base Voltage -160 V VCEO

1.23. 2n5401.pdf Size:680K _wietron

2N5401 PNP Transistors TO-92 1 1. EMITTER 2 3 2. BASE 3. COLLECTOR ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Symbol 2N5401 Unit Collector-Emitter Voltage V CEO -150 Vdc Collector-Base Voltage VCBO -160 Vdc Emitter-Base VOltage VEBO -5.0 Vdc Collector Current IC 600 mAdc Total Device Dissipation T =25 C PD W 0.625 A Junction Temperature T 150 j C Storage, Temperature Tstg

1.24. h2n5401.pdf Size:52K _hsmc

Spec. No. : HE6203 HI-SINCERITY Issued Date : 1992.09.22 Revised Date : 2005.01.20 MICROELECTRONICS CORP. Page No. : 1/5 H2N5401 PNP EPITAXIAL PLANAR TRANSISTOR Description The H2N5401 is designed for general purpose applications requiring high breakdown voltages. TO-92 Features • Complements to NPN Type H2N5551 • High Collector-Emitter Breakdown Voltage (VCEO=150V (@IC=1mA)) Ab

1.25. 2n5401.pdf Size:307K _can-sheng

TO-92 Plastic-Encapsulate Transistors TRANSISTOR (PNP) TRANSISTOR (PNP) TRANSISTOR (PNP) 2N5401 TRANSISTOR (PNP) FEATURE FEATURE FEATURE FEATURE TO-92 TO-92 TO-92 TO-92 � Switching and amplification in high voltage � Switching and amplification in high voltage � Switching and amplification in high voltage � Switching and amplification in high voltage � Applications su

1.26. 2n5401.pdf Size:170K _first_silicon

SEMICONDUCTOR 2N5401 TECHNICAL DATA 2N5401 TRANSISTOR (PNP) B C FEATURE Switching and Amplification in High Voltage Applications such as Telephony DIM MILLIMETERS Low Current(Max. 600mA) A 4.70 MAX E B 4.80 MAX G High Voltage(Max.160v) C 3.70 MAX D D 0.55 MAX E 1.00 F 1.27 G 0.85 H 0.45 _ MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) H J 14.00 0.50 + L 2

1.27. 2n5401s.pdf Size:225K _first_silicon

SEMICONDUCTOR 2N5401S TECHNICAL DATA High Voltage Transistor FEATURE 3 We declare that the material of product compliance with RoHS requirements. 2 1 DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping SOT–23 2N5401S 2L 3000/Tape&Reel MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage V – 150 Vdc CEO 3 COLLECTOR Collector–Base Voltage V CB

1.28. 2n5401.pdf Size:301K _shenzhen-tuofeng-semi

Shenzhen Tuofeng Semiconductor Technology Co., Ltd TO-92 Plastic-Encapsulate Transistors 2N5401 TRANSISTOR (PNP) TO-92 FEATURE Switching and amplification in high voltage 1.EMITTER Applications such as telephony 2.BASE Low current(max. 600mA) High voltage(max.160v) 3.COLLECTOR 1 2 3 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value

Datasheet: 2N538M, 2N539, 2N5390, 2N5399, 2N539A, 2N54, 2N540, 2N5400, 5609, 2N5404, 2N5405, 2N5406, 2N5407, 2N5408, 2N5409, 2N540A, 2N541.

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